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Fundamentals of bias temperature instability in MOS transistors: characterization methods, process and materials impact, DC and AC modeling
This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based mode...
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| Lenguaje: | eng |
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Springer
2016
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| Acceso en línea: | https://dx.doi.org/10.1007/978-81-322-2508-9 http://cds.cern.ch/record/2062557 |