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Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker

This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. The optimization of the device characteristics is performed by 2D and 3D...

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Detalles Bibliográficos
Autores principales: Fernandez-Martinez, Pablo, Ullan, Miguel, Flores, David, Hidalgo, Salvador, Quirion, David, Lynn, David
Lenguaje:eng
Publicado: 2015
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/11/01/C01043
http://cds.cern.ch/record/2064348