Effect of disorder and defects in ion-implanted semiconductors: electrical and physiochemical characterization

Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristi...

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Detalles Bibliográficos
Autores principales: Willardson, Robert K, Weber, Eicke R, Christofides, Constantinos, Ghibaudo, Gerard
Lenguaje:eng
Publicado: Elsevier Science 2014
Materias:
Acceso en línea:http://cds.cern.ch/record/2115756