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Effect of disorder and defects in ion-implanted semiconductors: electrical and physiochemical characterization
Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristi...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
Elsevier Science
2014
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2115756 |
| _version_ | 1780949192182595584 |
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| author | Willardson, Robert K Weber, Eicke R Christofides, Constantinos Ghibaudo, Gerard |
| author_facet | Willardson, Robert K Weber, Eicke R Christofides, Constantinos Ghibaudo, Gerard |
| author_sort | Willardson, Robert K |
| collection | CERN |
| description | Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing.<br><b>Electrical and Physicochemical Characterization</b> focuses on the physics of the annealing kine |
| id | cern-2115756 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2014 |
| publisher | Elsevier Science |
| record_format | invenio |
| spelling | cern-21157562021-04-21T19:57:04Zhttp://cds.cern.ch/record/2115756engWillardson, Robert KWeber, Eicke RChristofides, ConstantinosGhibaudo, GerardEffect of disorder and defects in ion-implanted semiconductors: electrical and physiochemical characterizationOther Fields of PhysicsDefects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing.<br><b>Electrical and Physicochemical Characterization</b> focuses on the physics of the annealing kineElsevier Scienceoai:cds.cern.ch:21157562014 |
| spellingShingle | Other Fields of Physics Willardson, Robert K Weber, Eicke R Christofides, Constantinos Ghibaudo, Gerard Effect of disorder and defects in ion-implanted semiconductors: electrical and physiochemical characterization |
| title | Effect of disorder and defects in ion-implanted semiconductors: electrical and physiochemical characterization |
| title_full | Effect of disorder and defects in ion-implanted semiconductors: electrical and physiochemical characterization |
| title_fullStr | Effect of disorder and defects in ion-implanted semiconductors: electrical and physiochemical characterization |
| title_full_unstemmed | Effect of disorder and defects in ion-implanted semiconductors: electrical and physiochemical characterization |
| title_short | Effect of disorder and defects in ion-implanted semiconductors: electrical and physiochemical characterization |
| title_sort | effect of disorder and defects in ion-implanted semiconductors: electrical and physiochemical characterization |
| topic | Other Fields of Physics |
| url | http://cds.cern.ch/record/2115756 |
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