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Effect of disorder and defects in ion-implanted semiconductors: electrical and physiochemical characterization
Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristi...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
Elsevier Science
2014
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2115756 |