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Plasma etching processes for interconnect realization in VLSI
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Lenguaje: | eng |
Publicado: |
Elsevier Science
2015
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/2123255 |
_version_ | 1780949509769003008 |
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author | Posseme, Nicolas |
author_facet | Posseme, Nicolas |
author_sort | Posseme, Nicolas |
collection | CERN |
id | cern-2123255 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2015 |
publisher | Elsevier Science |
record_format | invenio |
spelling | cern-21232552021-04-21T19:51:51Zhttp://cds.cern.ch/record/2123255engPosseme, NicolasPlasma etching processes for interconnect realization in VLSIEngineeringElsevier Scienceoai:cds.cern.ch:21232552015 |
spellingShingle | Engineering Posseme, Nicolas Plasma etching processes for interconnect realization in VLSI |
title | Plasma etching processes for interconnect realization in VLSI |
title_full | Plasma etching processes for interconnect realization in VLSI |
title_fullStr | Plasma etching processes for interconnect realization in VLSI |
title_full_unstemmed | Plasma etching processes for interconnect realization in VLSI |
title_short | Plasma etching processes for interconnect realization in VLSI |
title_sort | plasma etching processes for interconnect realization in vlsi |
topic | Engineering |
url | http://cds.cern.ch/record/2123255 |
work_keys_str_mv | AT possemenicolas plasmaetchingprocessesforinterconnectrealizationinvlsi |