Cargando…

Plasma etching processes for interconnect realization in VLSI

Detalles Bibliográficos
Autor principal: Posseme, Nicolas
Lenguaje:eng
Publicado: Elsevier Science 2015
Materias:
Acceso en línea:http://cds.cern.ch/record/2123255
_version_ 1780949509769003008
author Posseme, Nicolas
author_facet Posseme, Nicolas
author_sort Posseme, Nicolas
collection CERN
id cern-2123255
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
publisher Elsevier Science
record_format invenio
spelling cern-21232552021-04-21T19:51:51Zhttp://cds.cern.ch/record/2123255engPosseme, NicolasPlasma etching processes for interconnect realization in VLSIEngineeringElsevier Scienceoai:cds.cern.ch:21232552015
spellingShingle Engineering
Posseme, Nicolas
Plasma etching processes for interconnect realization in VLSI
title Plasma etching processes for interconnect realization in VLSI
title_full Plasma etching processes for interconnect realization in VLSI
title_fullStr Plasma etching processes for interconnect realization in VLSI
title_full_unstemmed Plasma etching processes for interconnect realization in VLSI
title_short Plasma etching processes for interconnect realization in VLSI
title_sort plasma etching processes for interconnect realization in vlsi
topic Engineering
url http://cds.cern.ch/record/2123255
work_keys_str_mv AT possemenicolas plasmaetchingprocessesforinterconnectrealizationinvlsi