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Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental...
Autores principales: | , |
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Lenguaje: | eng |
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Springer
2015
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/978-4-431-55800-2 http://cds.cern.ch/record/2143612 |
_version_ | 1780950236052586496 |
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author | Yoshida, Yutaka Langouche, Guido |
author_facet | Yoshida, Yutaka Langouche, Guido |
author_sort | Yoshida, Yutaka |
collection | CERN |
description | This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved. |
id | cern-2143612 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2015 |
publisher | Springer |
record_format | invenio |
spelling | cern-21436122021-04-21T19:44:43Zdoi:10.1007/978-4-431-55800-2http://cds.cern.ch/record/2143612engYoshida, YutakaLangouche, GuidoDefects and impurities in silicon materials: an introduction to atomic-level silicon engineeringEngineeringThis book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.Springeroai:cds.cern.ch:21436122015 |
spellingShingle | Engineering Yoshida, Yutaka Langouche, Guido Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering |
title | Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering |
title_full | Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering |
title_fullStr | Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering |
title_full_unstemmed | Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering |
title_short | Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering |
title_sort | defects and impurities in silicon materials: an introduction to atomic-level silicon engineering |
topic | Engineering |
url | https://dx.doi.org/10.1007/978-4-431-55800-2 http://cds.cern.ch/record/2143612 |
work_keys_str_mv | AT yoshidayutaka defectsandimpuritiesinsiliconmaterialsanintroductiontoatomiclevelsiliconengineering AT langoucheguido defectsandimpuritiesinsiliconmaterialsanintroductiontoatomiclevelsiliconengineering |