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Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental...

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Detalles Bibliográficos
Autores principales: Yoshida, Yutaka, Langouche, Guido
Lenguaje:eng
Publicado: Springer 2015
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-4-431-55800-2
http://cds.cern.ch/record/2143612
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author Yoshida, Yutaka
Langouche, Guido
author_facet Yoshida, Yutaka
Langouche, Guido
author_sort Yoshida, Yutaka
collection CERN
description This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
id cern-2143612
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
publisher Springer
record_format invenio
spelling cern-21436122021-04-21T19:44:43Zdoi:10.1007/978-4-431-55800-2http://cds.cern.ch/record/2143612engYoshida, YutakaLangouche, GuidoDefects and impurities in silicon materials: an introduction to atomic-level silicon engineeringEngineeringThis book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.Springeroai:cds.cern.ch:21436122015
spellingShingle Engineering
Yoshida, Yutaka
Langouche, Guido
Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering
title Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering
title_full Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering
title_fullStr Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering
title_full_unstemmed Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering
title_short Defects and impurities in silicon materials: an introduction to atomic-level silicon engineering
title_sort defects and impurities in silicon materials: an introduction to atomic-level silicon engineering
topic Engineering
url https://dx.doi.org/10.1007/978-4-431-55800-2
http://cds.cern.ch/record/2143612
work_keys_str_mv AT yoshidayutaka defectsandimpuritiesinsiliconmaterialsanintroductiontoatomiclevelsiliconengineering
AT langoucheguido defectsandimpuritiesinsiliconmaterialsanintroductiontoatomiclevelsiliconengineering