Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs

We studied device-to-device variations as a function of total dose in MOSFETs, using specially designed test structures and procedures aimed at maximizing matching between transistors. Degradation in nMOSFETs is less severe than in pMOSFETs and does not show any clear increase in sample-to-sample va...

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Detalles Bibliográficos
Autores principales: Gerardin, S, Bagatin, M, Cornale, D, Ding, L, Mattiazzo, S, Paccagnella, A, Faccio, F, Michelis, S
Lenguaje:eng
Publicado: 2015
Acceso en línea:https://dx.doi.org/10.1109/TNS.2015.2498539
http://cds.cern.ch/record/2160990

Internet

https://dx.doi.org/10.1109/TNS.2015.2498539
http://cds.cern.ch/record/2160990

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