Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs

We studied device-to-device variations as a function of total dose in MOSFETs, using specially designed test structures and procedures aimed at maximizing matching between transistors. Degradation in nMOSFETs is less severe than in pMOSFETs and does not show any clear increase in sample-to-sample va...

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Autores principales: Gerardin, S, Bagatin, M, Cornale, D, Ding, L, Mattiazzo, S, Paccagnella, A, Faccio, F, Michelis, S
Lenguaje:eng
Publicado: 2015
Acceso en línea:https://dx.doi.org/10.1109/TNS.2015.2498539
http://cds.cern.ch/record/2160990
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author Gerardin, S
Bagatin, M
Cornale, D
Ding, L
Mattiazzo, S
Paccagnella, A
Faccio, F
Michelis, S
author_facet Gerardin, S
Bagatin, M
Cornale, D
Ding, L
Mattiazzo, S
Paccagnella, A
Faccio, F
Michelis, S
author_sort Gerardin, S
collection CERN
description We studied device-to-device variations as a function of total dose in MOSFETs, using specially designed test structures and procedures aimed at maximizing matching between transistors. Degradation in nMOSFETs is less severe than in pMOSFETs and does not show any clear increase in sample-to-sample variability due to the exposure. At doses smaller than 1 Mrad( SiO2) variability in pMOSFETs is also practically unaffected, whereas at very high doses-in excess of tens of Mrad( SiO2)-variability in the on-current is enhanced in a way not correlated to pre-rad variability. The phenomenon is likely due to the impact of random dopant fluctuations on total ionizing dose effects.
id cern-2160990
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
record_format invenio
spelling cern-21609902019-09-30T06:29:59Zdoi:10.1109/TNS.2015.2498539http://cds.cern.ch/record/2160990engGerardin, SBagatin, MCornale, DDing, LMattiazzo, SPaccagnella, AFaccio, FMichelis, SEnhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETsWe studied device-to-device variations as a function of total dose in MOSFETs, using specially designed test structures and procedures aimed at maximizing matching between transistors. Degradation in nMOSFETs is less severe than in pMOSFETs and does not show any clear increase in sample-to-sample variability due to the exposure. At doses smaller than 1 Mrad( SiO2) variability in pMOSFETs is also practically unaffected, whereas at very high doses-in excess of tens of Mrad( SiO2)-variability in the on-current is enhanced in a way not correlated to pre-rad variability. The phenomenon is likely due to the impact of random dopant fluctuations on total ionizing dose effects.oai:cds.cern.ch:21609902015
spellingShingle Gerardin, S
Bagatin, M
Cornale, D
Ding, L
Mattiazzo, S
Paccagnella, A
Faccio, F
Michelis, S
Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs
title Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs
title_full Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs
title_fullStr Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs
title_full_unstemmed Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs
title_short Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs
title_sort enhancement of transistor-to-transistor variability due to total dose effects in 65-nm mosfets
url https://dx.doi.org/10.1109/TNS.2015.2498539
http://cds.cern.ch/record/2160990
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