Prediction Methodology for Proton Single Event Burnout: Application to a STRIPFET Device

This paper presents a single event burnout (SEB) sensitivity characterization for power MOSFETs, independent from tests, through a prediction model issued from TCAD analysis and the knowledge of device topology. The methodology is applied to a STRIPFET device and compared to proton data obtained at...

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Detalles Bibliográficos
Autores principales: Siconolfi, Sara, Mekki, Julien, Oser, Pascal, Spiezia, Giovanni, Hubert, Guillaume, David, Jean-Pierre
Lenguaje:eng
Publicado: 2015
Materias:
Engineering
Acceso en línea:https://dx.doi.org/10.1109/TNS.2015.2498308
http://cds.cern.ch/record/2161045

Internet

https://dx.doi.org/10.1109/TNS.2015.2498308
http://cds.cern.ch/record/2161045

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