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Prediction Methodology for Proton Single Event Burnout: Application to a STRIPFET Device
This paper presents a single event burnout (SEB) sensitivity characterization for power MOSFETs, independent from tests, through a prediction model issued from TCAD analysis and the knowledge of device topology. The methodology is applied to a STRIPFET device and compared to proton data obtained at...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2015
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2015.2498308 http://cds.cern.ch/record/2161045 |