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Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip
A 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse pro...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2015
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2015.2475124 http://cds.cern.ch/record/2161627 |