Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip

A 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse pro...

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Detalles Bibliográficos
Autores principales: Schioppa, E. J., Idarraga, J., van Beuzekom, M., Visser, J., Koffeman, E., Heijne, E., Engel, K. J., Uher, J.
Lenguaje:eng
Publicado: 2015
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2015.2475124
http://cds.cern.ch/record/2161627
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author Schioppa, E. J.
Idarraga, J.
van Beuzekom, M.
Visser, J.
Koffeman, E.
Heijne, E.
Engel, K. J.
Uher, J.
author_facet Schioppa, E. J.
Idarraga, J.
van Beuzekom, M.
Visser, J.
Koffeman, E.
Heijne, E.
Engel, K. J.
Uher, J.
author_sort Schioppa, E. J.
collection CERN
description A 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse profile of the charge carriers cloud in the sensor as a function of the drift distance from the point of generation. The result does not rely on model assumptions or electric field calculations. The data are also used to validate numerical simulations and to predict the detector spectral response to an X-ray fluorescence spectrum for applications in X-ray imaging.
id cern-2161627
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
record_format invenio
spelling cern-21616272019-09-30T06:29:59Zdoi:10.1109/TNS.2015.2475124http://cds.cern.ch/record/2161627engSchioppa, E. J.Idarraga, J.van Beuzekom, M.Visser, J.Koffeman, E.Heijne, E.Engel, K. J.Uher, J.Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout ChipDetectors and Experimental TechniquesA 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse profile of the charge carriers cloud in the sensor as a function of the drift distance from the point of generation. The result does not rely on model assumptions or electric field calculations. The data are also used to validate numerical simulations and to predict the detector spectral response to an X-ray fluorescence spectrum for applications in X-ray imaging.oai:cds.cern.ch:21616272015
spellingShingle Detectors and Experimental Techniques
Schioppa, E. J.
Idarraga, J.
van Beuzekom, M.
Visser, J.
Koffeman, E.
Heijne, E.
Engel, K. J.
Uher, J.
Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip
title Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip
title_full Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip
title_fullStr Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip
title_full_unstemmed Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip
title_short Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip
title_sort study of charge diffusion in a silicon detector using an energy sensitive pixel readout chip
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/TNS.2015.2475124
http://cds.cern.ch/record/2161627
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