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Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip

A 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse pro...

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Detalles Bibliográficos
Autores principales:	Schioppa, E. J., Idarraga, J., van Beuzekom, M., Visser, J., Koffeman, E., Heijne, E., Engel, K. J., Uher, J.
Lenguaje:	eng
Publicado:	2015
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1109/TNS.2015.2475124 http://cds.cern.ch/record/2161627

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