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Total Ionization Dose effects in the FE-I4 front-end chip of the ATLAS Pixel IBL detector
During the first year of operation, a drift of the IBL calibration parameters (Threshold and ToT) and a low voltage current increase was observed. It was assumed that both observations were related to radiation damage effects depending on the Total Ionizing Dose (TID) in the NMOS transistors of whic...
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| Lenguaje: | eng |
| Publicado: |
2016
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| Acceso en línea: | http://cds.cern.ch/record/2212253 |