Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard...

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Detalles Bibliográficos
Autores principales: Bomben, Marco, Bagolini, Alvise, Boscardin, Maurizio, Bosisio, Luciano, Calderini, Giovanni, Chauveau, Jacques, Ducourthial, Audrey, Giacomini, Gabriele, Marchiori, Giovanni, Zorzi, Nicola
Lenguaje:eng
Publicado: 2016
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/NSSMIC.2015.7581991
http://cds.cern.ch/record/2214355

Internet

https://dx.doi.org/10.1109/NSSMIC.2015.7581991
http://cds.cern.ch/record/2214355

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