Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard...

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Detalles Bibliográficos
Autores principales: Bomben, Marco, Bagolini, Alvise, Boscardin, Maurizio, Bosisio, Luciano, Calderini, Giovanni, Chauveau, Jacques, Ducourthial, Audrey, Giacomini, Gabriele, Marchiori, Giovanni, Zorzi, Nicola
Lenguaje:eng
Publicado: 2016
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/NSSMIC.2015.7581991
http://cds.cern.ch/record/2214355
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author Bomben, Marco
Bagolini, Alvise
Boscardin, Maurizio
Bosisio, Luciano
Calderini, Giovanni
Chauveau, Jacques
Ducourthial, Audrey
Giacomini, Gabriele
Marchiori, Giovanni
Zorzi, Nicola
author_facet Bomben, Marco
Bagolini, Alvise
Boscardin, Maurizio
Bosisio, Luciano
Calderini, Giovanni
Chauveau, Jacques
Ducourthial, Audrey
Giacomini, Gabriele
Marchiori, Giovanni
Zorzi, Nicola
author_sort Bomben, Marco
collection CERN
description In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.
id cern-2214355
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
record_format invenio
spelling cern-22143552021-11-27T03:34:11Zdoi:10.1109/NSSMIC.2015.7581991http://cds.cern.ch/record/2214355engBomben, MarcoBagolini, AlviseBoscardin, MaurizioBosisio, LucianoCalderini, GiovanniChauveau, JacquesDucourthial, AudreyGiacomini, GabrieleMarchiori, GiovanniZorzi, NicolaPerformance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity UpgradeDetectors and Experimental TechniquesIn view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.arXiv:1609.02128oai:cds.cern.ch:22143552016-09-07
spellingShingle Detectors and Experimental Techniques
Bomben, Marco
Bagolini, Alvise
Boscardin, Maurizio
Bosisio, Luciano
Calderini, Giovanni
Chauveau, Jacques
Ducourthial, Audrey
Giacomini, Gabriele
Marchiori, Giovanni
Zorzi, Nicola
Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
title Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
title_full Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
title_fullStr Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
title_full_unstemmed Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
title_short Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade
title_sort performance of edgeless silicon pixel sensors on p-type substrate for the atlas high-luminosity upgrade
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/NSSMIC.2015.7581991
http://cds.cern.ch/record/2214355
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