Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parame...

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Detalles Bibliográficos
Autores principales: Moscatelli, F, Passeri, D, Morozzi, A, Mendicino, R, Dalla Betta, G F, Bilei, G M
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: IEEE Trans. Nucl. Sci. 2016
Materias:
Detectors and Experimental Techniques
7: Advanced hybrid pixel detectors
Acceso en línea:https://dx.doi.org/10.1109/TNS.2016.2599560
http://cds.cern.ch/record/2237679

Internet

https://dx.doi.org/10.1109/TNS.2016.2599560
http://cds.cern.ch/record/2237679

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