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Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parame...
| Autores principales: | , , , , , |
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| Formato: | info:eu-repo/semantics/article |
| Lenguaje: | eng |
| Publicado: |
IEEE Trans. Nucl. Sci.
2016
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2016.2599560 http://cds.cern.ch/record/2237679 |