Introduction to magnetic random-access memory

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durabil...

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Detalles Bibliográficos
Autores principales: Dieny, Bernard, Goldfarb, Ronald B, Lee, Kyung-Jin
Lenguaje:eng
Publicado: Wiley-IEEE Press 2017
Materias:
Engineering
Acceso en línea:http://cds.cern.ch/record/2240140

Internet

http://cds.cern.ch/record/2240140

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