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Introduction to magnetic random-access memory
Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durabil...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
Wiley-IEEE Press
2017
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2240140 |