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Lattice site location of electrical dopant impurities in group-III nitrides
Dopants are impurities introduced in semiconductors in small quantities to tailor the material characteristics, the effects of which depend on the exact site the dopant occupies in the crystal lattice. The lattice location of impurities is, thus, crucial for the overall understanding of the semicond...
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| Lenguaje: | eng |
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2017
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| Acceso en línea: | http://cds.cern.ch/record/2240696 |