Origin of the lattice sites occupied by implanted Co in Si

We have investigated the lattice location of implanted 61Co in silicon. By means of emission channeling, three different lattice sites have been identified: ideal substitutional sites, displaced bond-centered sites and displaced tetrahedral interstitial sites. To assess the origin of the observed lattice sites we have compared our results to emission channeling studies on 59Fe and 65Ni and to Mössbauer spectroscopy experiments on 57Co, present in literature. The possible interpretation of several 57Co Mössbauer lines is discussed in the light of our new results on the 61Co lattice location. The conclusions are relevant for the microscopic understanding of some gettering techniques.