Origin of the lattice sites occupied by implanted Co in Si

We have investigated the lattice location of implanted 61Co in silicon. By means of emission channeling, three different lattice sites have been identified: ideal substitutional sites, displaced bond-centered sites and displaced tetrahedral interstitial sites. To assess the origin of the observed la...

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Detalles Bibliográficos
Autores principales: Silva, Daniel, Wahl, Ulrich, Martins Correia, Joao, Da Costa Pereira, Lino Miguel, Amorim, Lígia, Castro Ribeiro Da Silva, Manuel, Esteves De Araujo, Araujo Joao Pedro
Lenguaje:eng
Publicado: 2014
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/2240705

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