Direct observation of the lattice sites of implanted manganese in silicon

Mn-doped Si has attracted significant interest in the context of dilute magnetic semiconductors. We investigated the lattice location of implanted Mn in silicon of different doping types (n, n+ and p+) in the highly dilute regime. Three different lattice sites were identified by means of emission channe...

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Detalles Bibliográficos
Autores principales: da Silva, Daniel José, Wahl, Ulrich, Martins Correia, Joao, Amorim, Lígia, Decoster, Stefan, Castro Ribeiro Da Silva, Manuel, Da Costa Pereira, Lino Miguel, Esteves De Araujo, Araujo Joao Pedro
Lenguaje:eng
Publicado: 2015
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1007/s00339-016-9724-4
http://cds.cern.ch/record/2242912

Internet

https://dx.doi.org/10.1007/s00339-016-9724-4
http://cds.cern.ch/record/2242912

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