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Influence of the doping on the lattice sites of Fe in Si

We report on the lattice location and thermal stability of Fe in n+- and p+-type silicon. By means of emission channeling we have observed Fe on ideal substitutional sites, sites located in between bond-centered (BC) and substitutional sites, and sites displaced from tetrahedral towards anti-bonding...

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Detalles Bibliográficos
Autores principales: Silva, Daniel, Wahl, Ulrich, Martins Correia, Joao, Esteves De Araujo, Araujo Joao Pedro
Lenguaje:eng
Publicado: 2014
Materias:
Acceso en línea:https://dx.doi.org/10.1063/1.4865597
http://cds.cern.ch/record/2242914