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Influence of the doping on the lattice sites of Fe in Si
We report on the lattice location and thermal stability of Fe in n+- and p+-type silicon. By means of emission channeling we have observed Fe on ideal substitutional sites, sites located in between bond-centered (BC) and substitutional sites, and sites displaced from tetrahedral towards anti-bonding...
Autores principales: | , , , |
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Lenguaje: | eng |
Publicado: |
2014
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1063/1.4865597 http://cds.cern.ch/record/2242914 |