Cargando…
Influence of the doping on the lattice sites of Fe in Si
We report on the lattice location and thermal stability of Fe in n+- and p+-type silicon. By means of emission channeling we have observed Fe on ideal substitutional sites, sites located in between bond-centered (BC) and substitutional sites, and sites displaced from tetrahedral towards anti-bonding...
| Autores principales: | , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2014
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.4865597 http://cds.cern.ch/record/2242914 |