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Ionizing Energy Depositions After Fast Neutron Interactions in Silicon
In this study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energi...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2016
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2016.2574961 http://cds.cern.ch/record/2256773 |