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Ionizing Energy Depositions After Fast Neutron Interactions in Silicon

In this study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energi...

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Detalles Bibliográficos
Autores principales: Bergmann, Benedikt, Pospisil, Stanislav, Caicedo, Ivan, Kierstead, James, Takai, Helio, Frojdh, Erik
Lenguaje:eng
Publicado: 2016
Materias:
XX
Acceso en línea:https://dx.doi.org/10.1109/TNS.2016.2574961
http://cds.cern.ch/record/2256773

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