Measuring the sublattice displacement in (Ge,Sn)Te-based Rashba semiconductors using hyperfine interactions

Detalles Bibliográficos
Autores principales: Pereira, L M C, Lima, T A L, Jin, H, Correia, J G, Springholz, G, Gunnlaugsson, H P, Köster, U, Schell, J, Johnston, K
Publicado: 2017
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/2266659

Internet

http://cds.cern.ch/record/2266659

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