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Measuring the sublattice displacement in (Ge,Sn)Te-based Rashba semiconductors using hyperfine interactions
| Autores principales: | , , , , , , , , |
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| Publicado: |
2017
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2266659 |
| _version_ | 1780954538559143936 |
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| author | Pereira, L M C Lima, T A L Jin, H Correia, J G Springholz, G Gunnlaugsson, H P Köster, U Schell, J Johnston, K |
| author_facet | Pereira, L M C Lima, T A L Jin, H Correia, J G Springholz, G Gunnlaugsson, H P Köster, U Schell, J Johnston, K |
| author_sort | Pereira, L M C |
| collection | CERN |
| id | cern-2266659 |
| institution | Organización Europea para la Investigación Nuclear |
| publishDate | 2017 |
| record_format | invenio |
| spelling | cern-22666592019-09-30T06:29:59Zhttp://cds.cern.ch/record/2266659Pereira, L M CLima, T A LJin, HCorreia, J GSpringholz, GGunnlaugsson, H PKöster, USchell, JJohnston, KMeasuring the sublattice displacement in (Ge,Sn)Te-based Rashba semiconductors using hyperfine interactionsDetectors and Experimental TechniquesCERN-INTC-2017-048INTC-I-183oai:cds.cern.ch:22666592017-05-31 |
| spellingShingle | Detectors and Experimental Techniques Pereira, L M C Lima, T A L Jin, H Correia, J G Springholz, G Gunnlaugsson, H P Köster, U Schell, J Johnston, K Measuring the sublattice displacement in (Ge,Sn)Te-based Rashba semiconductors using hyperfine interactions |
| title | Measuring the sublattice displacement in (Ge,Sn)Te-based Rashba semiconductors using hyperfine interactions |
| title_full | Measuring the sublattice displacement in (Ge,Sn)Te-based Rashba semiconductors using hyperfine interactions |
| title_fullStr | Measuring the sublattice displacement in (Ge,Sn)Te-based Rashba semiconductors using hyperfine interactions |
| title_full_unstemmed | Measuring the sublattice displacement in (Ge,Sn)Te-based Rashba semiconductors using hyperfine interactions |
| title_short | Measuring the sublattice displacement in (Ge,Sn)Te-based Rashba semiconductors using hyperfine interactions |
| title_sort | measuring the sublattice displacement in (ge,sn)te-based rashba semiconductors using hyperfine interactions |
| topic | Detectors and Experimental Techniques |
| url | http://cds.cern.ch/record/2266659 |
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