Neutron irradiation test of depleted CMOS pixel detector prototypes

Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 kΩ cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS techno...

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Detalles Bibliográficos
Autores principales: Mandić, Igor, Cindro, Vladimir, Gorišek, Andrej, Hiti, Bojan, Kramberger, Gregor, Mikuž, Marko, Zavrtanik, Marko, Hemperek, Tomasz, Daas, Michael, Hügging, Fabian, Krüger, Hans, Pohl, David-Leon, Wermes, Norbert, Gonella, Laura
Lenguaje:eng
Publicado: 2017
Materias:
physics.ins-det
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/12/02/P02021
http://cds.cern.ch/record/2289490

Internet

https://dx.doi.org/10.1088/1748-0221/12/02/P02021
http://cds.cern.ch/record/2289490

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