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Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of rad...
| Autores principales: | , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2017
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/12/10/P10020 http://cds.cern.ch/record/2289491 |