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Status of HVCMOS Developments for ATLAS

This paper describes the status of the developments made by ATLAS HVCMOS and HVMAPS collaborations. We have proposed two HVCMOS sensor concepts for ATLAS pixels—the capacitive coupled pixel detector (CCPD) and the monolithic detector. The sensors have been implemented in three semiconductor processe...

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Autores principales: Peric, Ivan, Blanco, Roberto, Casanova Mohr, Raimon, Ehrler, Felix, Guezzi Messaoud, Fadoua, Kramer, Christian, Leys, Richard, Prathapan, Mridula, Schimassek, Rudolf, Schoning, Andre, Vilella Figueras, Eva, Weber, Alena, Zhang, Hui
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: JINST 2017
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/12/02/C02030
http://cds.cern.ch/record/2290184
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author Peric, Ivan
Blanco, Roberto
Casanova Mohr, Raimon
Ehrler, Felix
Guezzi Messaoud, Fadoua
Kramer, Christian
Leys, Richard
Prathapan, Mridula
Schimassek, Rudolf
Schoning, Andre
Vilella Figueras, Eva
Weber, Alena
Zhang, Hui
author_facet Peric, Ivan
Blanco, Roberto
Casanova Mohr, Raimon
Ehrler, Felix
Guezzi Messaoud, Fadoua
Kramer, Christian
Leys, Richard
Prathapan, Mridula
Schimassek, Rudolf
Schoning, Andre
Vilella Figueras, Eva
Weber, Alena
Zhang, Hui
author_sort Peric, Ivan
collection CERN
description This paper describes the status of the developments made by ATLAS HVCMOS and HVMAPS collaborations. We have proposed two HVCMOS sensor concepts for ATLAS pixels—the capacitive coupled pixel detector (CCPD) and the monolithic detector. The sensors have been implemented in three semiconductor processes AMS H18, AMS H35 and LFoundry LFA15. Efficiency of 99.7% after neutron irradiation to 1015 neq/cm2W has been measured with the small area CCPD prototype in AMS H18 technology. About 84% of the particles are detected with a time resolution better than 25 ns. The sensor was implemented on a low resistivity substrate. The large area demonstrator sensor in AMS H35 process has been designed, produced and successfully tested. The sensor has been produced on different high resistivity substrates ranging from 80 Ωcm to more than 1 kΩ. Monolithic- and hybrid readout are both possible. In August 2016, six different monolithic pixel matrices for ATLAS with a total area of 1 cm2 have been submitted in LFoundry LFA15 process. The matrices implement column drain and triggered readout as well as waveform sampling capability on pixel level. Design details will be presented.
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spelling cern-22901842019-09-30T06:29:59Z doi:10.1088/1748-0221/12/02/C02030 http://cds.cern.ch/record/2290184 eng Peric, Ivan Blanco, Roberto Casanova Mohr, Raimon Ehrler, Felix Guezzi Messaoud, Fadoua Kramer, Christian Leys, Richard Prathapan, Mridula Schimassek, Rudolf Schoning, Andre Vilella Figueras, Eva Weber, Alena Zhang, Hui Status of HVCMOS Developments for ATLAS Detectors and Experimental Techniques 6: Novel high voltage and resistive CMOS sensors This paper describes the status of the developments made by ATLAS HVCMOS and HVMAPS collaborations. We have proposed two HVCMOS sensor concepts for ATLAS pixels—the capacitive coupled pixel detector (CCPD) and the monolithic detector. The sensors have been implemented in three semiconductor processes AMS H18, AMS H35 and LFoundry LFA15. Efficiency of 99.7% after neutron irradiation to 1015 neq/cm2W has been measured with the small area CCPD prototype in AMS H18 technology. About 84% of the particles are detected with a time resolution better than 25 ns. The sensor was implemented on a low resistivity substrate. The large area demonstrator sensor in AMS H35 process has been designed, produced and successfully tested. The sensor has been produced on different high resistivity substrates ranging from 80 Ωcm to more than 1 kΩ. Monolithic- and hybrid readout are both possible. In August 2016, six different monolithic pixel matrices for ATLAS with a total area of 1 cm2 have been submitted in LFoundry LFA15 process. The matrices implement column drain and triggered readout as well as waveform sampling capability on pixel level. Design details will be presented. info:eu-repo/grantAgreement/EC/FP7/654168 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/2290184 JINST JINST, (2017) pp. C02030 2017
spellingShingle Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
Peric, Ivan
Blanco, Roberto
Casanova Mohr, Raimon
Ehrler, Felix
Guezzi Messaoud, Fadoua
Kramer, Christian
Leys, Richard
Prathapan, Mridula
Schimassek, Rudolf
Schoning, Andre
Vilella Figueras, Eva
Weber, Alena
Zhang, Hui
Status of HVCMOS Developments for ATLAS
title Status of HVCMOS Developments for ATLAS
title_full Status of HVCMOS Developments for ATLAS
title_fullStr Status of HVCMOS Developments for ATLAS
title_full_unstemmed Status of HVCMOS Developments for ATLAS
title_short Status of HVCMOS Developments for ATLAS
title_sort status of hvcmos developments for atlas
topic Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
url https://dx.doi.org/10.1088/1748-0221/12/02/C02030
http://cds.cern.ch/record/2290184
http://cds.cern.ch/record/2290184
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