Radiation resistant LGAD design

In this paper, we report on the radiation resistance of 50-micron thick Low Gain Avalanche Diodes (LGAD) manufactured at the Fondazione Bruno Kessler (FBK) employing different dopings in the gain layer. LGADs with a gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbona...

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Detalles Bibliográficos
Autores principales: Ferrero, M., Arcidiacono, R., Barozzi, M., Boscardin, M., Cartiglia, N., Dalla Betta, G.F., Galloway, Z., Mandurrino, M., Mazza, S., Paternoster, G., Ficorella, F., Pancheri, L., Sadrozinski, H-F W., Sola, V., Staiano, A., Seiden, A., Siviero, F., Tornago, M., Zhao, Y.
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: Nucl. Instrum. Methods Phys. Res., A 2018
Materias:
hep-ex
Particle Physics - Experiment
physics.ins-det
Detectors and Experimental Techniques
7: Advanced hybrid pixel detectors
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2018.11.121
http://cds.cern.ch/record/2305769

Internet

https://dx.doi.org/10.1016/j.nima.2018.11.121
http://cds.cern.ch/record/2305769

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