First FBK production of 50 μm ultra-fast silicon detectors

Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $\mu$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and...

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Detalles Bibliográficos
Autores principales: Sola, V., Arcidiacono, R., Boscardin, M., Cartiglia, N., Dalla Betta, G.F., Ficorella, F., Ferrero, M., Mandurrino, M., Pancheri, L., Paternoster, G., Staiano, A.
Lenguaje:eng
Publicado: 2018
Materias:
physics.ins-det
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2018.07.060
http://cds.cern.ch/record/2305773

Internet

https://dx.doi.org/10.1016/j.nima.2018.07.060
http://cds.cern.ch/record/2305773

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