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Modeling nanowire and double-gate junctionless field-effect transistors
The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models f...
| Autores principales: | , |
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| Lenguaje: | eng |
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Cambridge University Press
2018
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| Acceso en línea: | https://dx.doi.org/10.1017/9781316676899 http://cds.cern.ch/record/2310391 |