Cargando…
Total Ionizing Dose effects on 28nm CMOS Technology
| Autor principal: | |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2018
|
| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2315484 |
| _version_ | 1780958144794460160 |
|---|---|
| author | Enz, Christian |
| author_facet | Enz, Christian |
| author_sort | Enz, Christian |
| collection | CERN |
| id | cern-2315484 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2018 |
| record_format | invenio |
| spelling | cern-23154842022-11-02T22:18:06Zhttp://cds.cern.ch/record/2315484engEnz, ChristianTotal Ionizing Dose effects on 28nm CMOS TechnologyACES 2018 - Sixth Common ATLAS CMS Electronics Workshop for LHC UpgradesSLHCoai:cds.cern.ch:23154842018 |
| spellingShingle | SLHC Enz, Christian Total Ionizing Dose effects on 28nm CMOS Technology |
| title | Total Ionizing Dose effects on 28nm CMOS Technology |
| title_full | Total Ionizing Dose effects on 28nm CMOS Technology |
| title_fullStr | Total Ionizing Dose effects on 28nm CMOS Technology |
| title_full_unstemmed | Total Ionizing Dose effects on 28nm CMOS Technology |
| title_short | Total Ionizing Dose effects on 28nm CMOS Technology |
| title_sort | total ionizing dose effects on 28nm cmos technology |
| topic | SLHC |
| url | http://cds.cern.ch/record/2315484 |
| work_keys_str_mv | AT enzchristian totalionizingdoseeffectson28nmcmostechnology AT enzchristian aces2018sixthcommonatlascmselectronicsworkshopforlhcupgrades |