Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad

Ejemplares similares

• Analog performance of SOI MOSFETs up to 25 Mrad (Si)
  por: Faccio, F, et al.
  Publicado: (1995)
• Noise characterization of transistors in a 1.2 $\mu$m CMOS-SOI technology up to a total dose of 12 Mrad (SI)
  por: Faccio, F, et al.
  Publicado: (1994)
• A fast, low power CMOS amplifier on SOI for sensor applications in a radiation environment of up to 20 Mrad(Si)
  por: Aspell, P, et al.
  Publicado: (1996)
• Study of a radiation hard SOI-CMOS technology for mixed analog-digital IC design for applications in LHC
  por: Aspell, P, et al.
  Publicado: (1995)
• Status report RD9: a demonstrator analog signal processing circuit in a radiation hard SOI-CMOS technology
  por: Anghinolfi, Francis, et al.
  Publicado: (1992)