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Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad

Detalles Bibliográficos
Autores principales: Faccio, F, Heijne, Erik H M, Jarron, Pierre, Glaser, M, Rossi, G, Avrillon, S, Borel, G
Lenguaje:eng
Publicado: 1992
Materias:
Acceso en línea:http://cds.cern.ch/record/246112
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author Faccio, F
Heijne, Erik H M
Jarron, Pierre
Glaser, M
Rossi, G
Avrillon, S
Borel, G
author_facet Faccio, F
Heijne, Erik H M
Jarron, Pierre
Glaser, M
Rossi, G
Avrillon, S
Borel, G
author_sort Faccio, F
collection CERN
id cern-246112
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1992
record_format invenio
spelling cern-2461122019-09-30T06:29:59Zhttp://cds.cern.ch/record/246112engFaccio, FHeijne, Erik H MJarron, PierreGlaser, MRossi, GAvrillon, SBorel, GStudy of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 MradDetectors and Experimental TechniquesCERN-ECP-92-024CERN-ECP-92-24oai:cds.cern.ch:2461121992-12-18
spellingShingle Detectors and Experimental Techniques
Faccio, F
Heijne, Erik H M
Jarron, Pierre
Glaser, M
Rossi, G
Avrillon, S
Borel, G
Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad
title Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad
title_full Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad
title_fullStr Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad
title_full_unstemmed Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad
title_short Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad
title_sort study of device parameters for analog ic design in a 1.2$\mu$m cmos-soi technology after 10 mrad
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/246112
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