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Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad
Autores principales: | , , , , , , |
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Lenguaje: | eng |
Publicado: |
1992
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/246112 |
_version_ | 1780885253933498368 |
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author | Faccio, F Heijne, Erik H M Jarron, Pierre Glaser, M Rossi, G Avrillon, S Borel, G |
author_facet | Faccio, F Heijne, Erik H M Jarron, Pierre Glaser, M Rossi, G Avrillon, S Borel, G |
author_sort | Faccio, F |
collection | CERN |
id | cern-246112 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1992 |
record_format | invenio |
spelling | cern-2461122019-09-30T06:29:59Zhttp://cds.cern.ch/record/246112engFaccio, FHeijne, Erik H MJarron, PierreGlaser, MRossi, GAvrillon, SBorel, GStudy of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 MradDetectors and Experimental TechniquesCERN-ECP-92-024CERN-ECP-92-24oai:cds.cern.ch:2461121992-12-18 |
spellingShingle | Detectors and Experimental Techniques Faccio, F Heijne, Erik H M Jarron, Pierre Glaser, M Rossi, G Avrillon, S Borel, G Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad |
title | Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad |
title_full | Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad |
title_fullStr | Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad |
title_full_unstemmed | Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad |
title_short | Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad |
title_sort | study of device parameters for analog ic design in a 1.2$\mu$m cmos-soi technology after 10 mrad |
topic | Detectors and Experimental Techniques |
url | http://cds.cern.ch/record/246112 |
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