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Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad

Detalles Bibliográficos
Autores principales:	Faccio, F, Heijne, Erik H M, Jarron, Pierre, Glaser, M, Rossi, G, Avrillon, S, Borel, G
Lenguaje:	eng
Publicado:	1992
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/246112

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