Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers

A new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector str...

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Detalles Bibliográficos
Autores principales: Dierickx, B, Wouters, D., Willems, G., Alaerts, A., Debusschere, I., Simoen, E., Vlummens, J., Akimoto, H., Claeys, C., Maes, H., Hermans, L., Heijne, E.H.M., Jarron, P., Anghinolfi, Francis, Campbell, M, Pengg, F X, Aspell, P, Bosisio, L, Focardi, E, Forti, F., Kashigin, S., Mekkaoui, A., Habrard, M.C., Sauvage, D., Delpierre, P.
Lenguaje:eng
Publicado: 1993
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/23.256656
http://cds.cern.ch/record/256403

Internet

https://dx.doi.org/10.1109/23.256656
http://cds.cern.ch/record/256403

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