Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers

A new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector str...

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Detalles Bibliográficos
Autores principales: Dierickx, B, Wouters, D., Willems, G., Alaerts, A., Debusschere, I., Simoen, E., Vlummens, J., Akimoto, H., Claeys, C., Maes, H., Hermans, L., Heijne, E.H.M., Jarron, P., Anghinolfi, Francis, Campbell, M, Pengg, F X, Aspell, P, Bosisio, L, Focardi, E, Forti, F., Kashigin, S., Mekkaoui, A., Habrard, M.C., Sauvage, D., Delpierre, P.
Lenguaje:eng
Publicado: 1993
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/23.256656
http://cds.cern.ch/record/256403
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author Dierickx, B
Wouters, D.
Willems, G.
Alaerts, A.
Debusschere, I.
Simoen, E.
Vlummens, J.
Akimoto, H.
Claeys, C.
Maes, H.
Hermans, L.
Heijne, E.H.M.
Jarron, P.
Anghinolfi, Francis
Campbell, M
Pengg, F X
Aspell, P
Bosisio, L
Focardi, E
Forti, F.
Kashigin, S.
Mekkaoui, A.
Habrard, M.C.
Sauvage, D.
Delpierre, P.
author_facet Dierickx, B
Wouters, D.
Willems, G.
Alaerts, A.
Debusschere, I.
Simoen, E.
Vlummens, J.
Akimoto, H.
Claeys, C.
Maes, H.
Hermans, L.
Heijne, E.H.M.
Jarron, P.
Anghinolfi, Francis
Campbell, M
Pengg, F X
Aspell, P
Bosisio, L
Focardi, E
Forti, F.
Kashigin, S.
Mekkaoui, A.
Habrard, M.C.
Sauvage, D.
Delpierre, P.
author_sort Dierickx, B
collection CERN
description A new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector structures fabricated in the bulk. The leakage current of the high-resistivity PIN-diodes was kept in the order of 5 to 10 nA/cm$^2$. The SOI preparation processes considered (SIMOX and ZMR) produced working electronic circuits and appear to be compatible with the fabrication of detectors of suitable quality.
id cern-256403
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1993
record_format invenio
spelling cern-2564032019-09-30T06:29:59Zdoi:10.1109/23.256656http://cds.cern.ch/record/256403engDierickx, BWouters, D.Willems, G.Alaerts, A.Debusschere, I.Simoen, E.Vlummens, J.Akimoto, H.Claeys, C.Maes, H.Hermans, L.Heijne, E.H.M.Jarron, P.Anghinolfi, FrancisCampbell, MPengg, F XAspell, PBosisio, LFocardi, EForti, F.Kashigin, S.Mekkaoui, A.Habrard, M.C.Sauvage, D.Delpierre, P.Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafersDetectors and Experimental TechniquesA new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector structures fabricated in the bulk. The leakage current of the high-resistivity PIN-diodes was kept in the order of 5 to 10 nA/cm$^2$. The SOI preparation processes considered (SIMOX and ZMR) produced working electronic circuits and appear to be compatible with the fabrication of detectors of suitable quality.oai:cds.cern.ch:2564031993
spellingShingle Detectors and Experimental Techniques
Dierickx, B
Wouters, D.
Willems, G.
Alaerts, A.
Debusschere, I.
Simoen, E.
Vlummens, J.
Akimoto, H.
Claeys, C.
Maes, H.
Hermans, L.
Heijne, E.H.M.
Jarron, P.
Anghinolfi, Francis
Campbell, M
Pengg, F X
Aspell, P
Bosisio, L
Focardi, E
Forti, F.
Kashigin, S.
Mekkaoui, A.
Habrard, M.C.
Sauvage, D.
Delpierre, P.
Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
title Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
title_full Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
title_fullStr Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
title_full_unstemmed Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
title_short Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
title_sort integration of cmos-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/23.256656
http://cds.cern.ch/record/256403
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