Noise and DC characteristics of GaAs FETs for their use in front-end electronics at future colliders

Detalles Bibliográficos
Autores principales: Karpinski, W, Lübelsmeyer, K, Pierschel, G, Rente, C, Tenbusch, F
Lenguaje:eng
Publicado: 1994
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/259332

Internet

http://cds.cern.ch/record/259332

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