Annealing of Cd-implanted GaAs: defect removal, lattice site occupation, and electrical activation

Detalles Bibliográficos
Autores principales: Moriya, N, Brener, I, Kalish, R, Pfeiffer, Wolfgang, Deicher, M, Keller, R, Magerle, R, Recknagel, E, Skudlik, H, Wichert, T, Wolf, H
Lenguaje:eng
Publicado: 1993
Materias:
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1063/1.354039
http://cds.cern.ch/record/260074

Internet

https://dx.doi.org/10.1063/1.354039
http://cds.cern.ch/record/260074

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