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Annealing of Cd-implanted GaAs: defect removal, lattice site occupation, and electrical activation

Detalles Bibliográficos
Autores principales:	Moriya, N, Brener, I, Kalish, R, Pfeiffer, Wolfgang, Deicher, M, Keller, R, Magerle, R, Recknagel, E, Skudlik, H, Wichert, T, Wolf, H
Lenguaje:	eng
Publicado:	1993
Materias:	Other Fields of Physics
Acceso en línea:	https://dx.doi.org/10.1063/1.354039 http://cds.cern.ch/record/260074

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