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Direct evidence for substitutional Li after ion-implanted into highly phosphorus-doped Si

Detalles Bibliográficos
Autores principales:	Wahl, U, Hofsäss, H C, Jahn, S G, Winter, S, Recknagel, E
Lenguaje:	eng
Publicado:	1993
Materias:	Other Fields of Physics
Acceso en línea:	https://dx.doi.org/10.1063/1.108839 http://cds.cern.ch/record/260193

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