Mössbauer study of a complex Sn-impurity defect in GaAs from implantations of radioactive $^{119}$In ions

Detalles Bibliográficos
Autores principales: Weyer, G, Damgaard, S, Petersen, J W, Heinemeier, J
Lenguaje:eng
Publicado: 1980
Materias:
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1088/0022-3719/13/9/002
http://cds.cern.ch/record/264783

Internet

https://dx.doi.org/10.1088/0022-3719/13/9/002
http://cds.cern.ch/record/264783

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