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Mössbauer study of a complex Sn-impurity defect in GaAs from implantations of radioactive $^{119}$In ions

Detalles Bibliográficos
Autores principales:	Weyer, G, Damgaard, S, Petersen, J W, Heinemeier, J
Lenguaje:	eng
Publicado:	1980
Materias:	Other Fields of Physics
Acceso en línea:	https://dx.doi.org/10.1088/0022-3719/13/9/002 http://cds.cern.ch/record/264783

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