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As-implanted lattice site of dopants in semiconductors

Detalles Bibliográficos
Autores principales: Hofsäss, H C, Linder, G, Winter, S, Besold, B, Recknagel, E, Weyer, G, Petersen, J W
Lenguaje:eng
Publicado: 1986
Materias:
Acceso en línea:https://dx.doi.org/10.4028/www.scientific.net/MSF.10-12.1183
http://cds.cern.ch/record/264811
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author Hofsäss, H C
Linder, G
Winter, S
Besold, B
Recknagel, E
Weyer, G
Petersen, J W
author_facet Hofsäss, H C
Linder, G
Winter, S
Besold, B
Recknagel, E
Weyer, G
Petersen, J W
author_sort Hofsäss, H C
collection CERN
id cern-264811
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1986
record_format invenio
spelling cern-2648112019-09-30T06:29:59Zdoi:10.4028/www.scientific.net/MSF.10-12.1183http://cds.cern.ch/record/264811engHofsäss, H CLinder, GWinter, SBesold, BRecknagel, EWeyer, GPetersen, J WAs-implanted lattice site of dopants in semiconductorsOther Fields of Physicsoai:cds.cern.ch:2648111986
spellingShingle Other Fields of Physics
Hofsäss, H C
Linder, G
Winter, S
Besold, B
Recknagel, E
Weyer, G
Petersen, J W
As-implanted lattice site of dopants in semiconductors
title As-implanted lattice site of dopants in semiconductors
title_full As-implanted lattice site of dopants in semiconductors
title_fullStr As-implanted lattice site of dopants in semiconductors
title_full_unstemmed As-implanted lattice site of dopants in semiconductors
title_short As-implanted lattice site of dopants in semiconductors
title_sort as-implanted lattice site of dopants in semiconductors
topic Other Fields of Physics
url https://dx.doi.org/10.4028/www.scientific.net/MSF.10-12.1183
http://cds.cern.ch/record/264811
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AT recknagele asimplantedlatticesiteofdopantsinsemiconductors
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